Samsung Electronics Co., Ltd.

Choong-Man Lee

Sung-lae Cho

Jin-il Lee

Young-Lim Park

Gwan-Hyeob Koh

Jang-Eun Lee

Ik-Soo Kim

Bong-jin Kuh

Se-Ho Lee

Dong-Hyun Im

Yong-Ho Ha

Ji-Hye Yi

Yoon-jong Song

Hye-Young Park

Su-Jin Ahn

Soon-Oh Park

Young-Nam Hwang

Kyung-Chang Ryoo

Chang-Wook Jeong

Sang-Don Nam

Su-Youn Lee

Jang-Eun Heo

Sang-Wook Lim

Sandip Tiwari

Chung-woo Kim

Byoung-Jae Bae

Jin-Seok Lee

Soo-doo Chae

Sung-Wook Hwang

Toshiro Nakanishi

Jeong-Hee Han

Do-Haing Lee

Moon-Kyung Kim

Myong-Woon Kim

Hye-young Park

Dong-chul Yoo

Soo-Doo Chae

Jin-Dong Kim

Yung-hee Yvette Lee

Ravishankar Sundararaman

Joshua Mark Rubin

Chan-jin Park

Sung-Ju Lee

A method for fabricating a cell string includes forming an interlayer dielectric layer, a sacrificial layer, and a semiconductor pattern on a semiconductor substrate, such that the interlayer dielectric layer and the sacrificial layer are formed in a first direction parallel with the semiconductor substrate, and such that the semiconductor pattern is formed in a second direction perpendicular to the semiconductor substrate, forming an opening by patterning the interlayer dielectric layer and the sacrificial layer, filling the opening with a metal, and annealing the semiconductor pattern having the opening filled with the metal.

Methods for fabricating a cell string and a non-volatile memory device including the cell string

A germanium (Ge) compound is provided. The Ge compound has a chemical formula GeRxRy. 'R' is an alkyl group, and 'R' is one of hydrogen, amino group, allyl group and vinyl group. &#x201c;x&#x201d; is greater than zero and less than 4, and the sum of &#x201c;x&#x201d; and &#x201c;y&#x201d; is equal to 4. Methods of forming the Ge compound, methods of fabricating a phase change memory device using the Ge compound, and phase change memory devices fabricated using the Ge compound are also provided.

Germanium compound, semiconductor device fabricated using the same, and methods of forming the same

An electro-mechanical transistor includes a source electrode and a drain electrode spaced apart from each other. A source pillar is between the substrate and the source electrode. A drain pillar is between the substrate and the drain electrode. A moveable channel is spaced apart from the source electrode and the drain electrode. A gate nano-pillar is between the moveable channel and the substrate. A first dielectric layer is between the moveable channel and the gate nano-pillar. A second dielectric layer is between the source pillar and the source electrode. A third dielectric layer is between the drain pillar and the drain electrode.

Electro-mechanical transistor

A method of forming a phase change material layer includes preparing a substrate having an insulator and a conductor, loading the substrate into a process housing, injecting a deposition gas into the process housing to selectively form a phase change material layer on an exposed surface of the conductor, and unloading the substrate from the process housing, wherein a lifetime of the deposition gas in the process housing is shorter than a time the deposition gas takes to react by thermal energy.

Method of forming a phase change material layer, method of forming a phase change memory device using the same, and a phase change memory device so formed

A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation. In one embodiment, a semiconductor memory device includes a molding layer disposed over semiconductor substrate, a phase-changeable material pattern, and an oxidation barrier of electrically insulative material. The molding layer has a protrusion at its upper portion. One portion of the phase-changeable material pattern overlies the protrusion of the molding layer, and another portion of the phase-changeable material pattern extends through the protrusion. The electrically insulative material of the oxidation barrier may cover the phase-changeable material pattern and/or extend along and cover the entire area at which the protrusion of the molding layer and the portion of the phase-change material pattern disposed on the protrusion adjoin.

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Methods of manufacturing non-volatile memory devices that can reduce or prevent loss of charges stored in a charge storage layer and/or that can improve charge storage capacity by neutral beam irradiation of an insulating layer are disclosed. The methods include forming a tunneling insulating layer on a substrate, forming a charge storage layer on the tunneling insulating layer, forming a blocking insulating layer on the charge storage layer, irradiating the blocking insulating layer and/or the tunneling insulating layer with a neutral beam, and forming a gate conductive layer on the blocking insulating layer.

Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation

A gap filling method and a method for forming a memory device, including forming an insulating layer on a substrate, forming a gap region in the insulating layer, and repeatedly forming a phase change material layer and etching the phase change material layer to form a phase change material layer pattern in the gap region.

Gap filling method and method for forming semiconductor memory device using the same

A method of forming a ferroelectric layer is provided. A metal-organic source gas is provided into a chamber into which an oxidation gas is provided for a first time period to form ferroelectric grains on a substrate. A ferroelectric layer is formed by performing at least twice a step of providing a metal-organic source gas into the chamber during the first time period using a pulse method to grow the ferroelectric grains.

Methods of forming a ferroelectric layer and methods of manufacturing a ferroelectric capacitor including the same

A method of fabricating a ferroelectric device includes forming a ferroelectric layer on a substrate in a reaction chamber. An inactive gas is provided into the reaction chamber while unloading the substrate therefrom to thereby substantially inhibit formation of an impurity layer on the ferroelectric layer.

Methods of fabricating ferroelectric devices

A thin film layer, a heating electrode, a phase change memory including the thin film layer, and methods for forming the same. The method of forming the thin film layer by atomic layer deposition (ALD) may include injecting a titanium (Ti) source, a nitrogen (N) source, and/or an aluminum (Al) source onto a substrate at different flow rates and for different periods of time. The heating electrode may include a TiAlN layer, wherein x is about 0.4&#x3c;x&#x3c;0.5 at a first portion of the heating electrode contacting a phase change layer and 0&#x3c;x&#x3c;0.1 at other portions of the heating electrode. The phase change memory may include the heating electrode including the TiAlN layer, an insulating layer formed on the heating electrode and having a contact hole exposing the heating electrode and the phase change layer contacting the first portion of the heating electrode.

Thin film layer, heating electrode, phase change memory including thin film layer and methods for forming the same

A phase changeable material layer usable in a semiconductor memory device and a method of forming the same are disclosed. The method includes forming a plasma in a chamber having a substrate disposed therein, providing a first source gas including a germanium based material to form a first layer including the germanium based material on the substrate while maintaining the plasma in the chamber, providing a second source gas including a tellurium based material to react with the first layer to form a first composite material layer including a germanium-tellurium composite material on the substrate while maintaining the plasma in the chamber, providing a third source gas including an antimony based material to form a second layer including the antimony based material on the first composite material layer while maintaining the plasma in the chamber, and providing a fourth source gas including tellurium based material to react with the second layer including antimony based material to form a second composite material layer including an antimony-tellurium composite material on the first composite material layer. Accordingly, the phase changeable material layer may be formed at a low temperature and power to have desirable electrical characteristics.

Method of forming a phase changeable material layer, a method of manufacturing a phase changeable memory unit, and a method of manufacturing a phase changeable semiconductor memory device

In one embodiment, a phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.

Growing community of inventors

Seoul, South Korea

Choong-Man Lee