The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 03, 2012
Filed:
Aug. 20, 2010
Suk-hun Choi, Gyeonggi-do, KR;
Chang-ki Hong, Gyeonggi-do, KR;
Yoon-ho Son, Gyeonggi-do, KR;
Jang-eun Heo, Seoul, KR;
Suk-Hun Choi, Gyeonggi-do, KR;
Chang-Ki Hong, Gyeonggi-do, KR;
Yoon-Ho Son, Gyeonggi-do, KR;
Jang-Eun Heo, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second contact hole is disposed on the semiconductor substrate, exposing the first and second contact regions. A first conductive layer is disposed on the first insulating interlayer to fill the first and the second contact holes. A first protection layer pattern and a lower wiring protection pattern are disposed on the first conductive layer. A first contact with a first electrode and a second contact with a lower wiring are disposed so as to connect the first and second contact regions. A second protection layer with a second electrode is disposed on the first protection layer pattern and the lower wiring protection pattern. A via filled with a phase-change material is disposed between the first electrode and the second electrode.