The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2010
Filed:
May. 01, 2008
Hong-sik Yoon, Seongnam-si, KR;
In-seok Yeo, Seoul, KR;
Seung-jae Baik, Seoul, KR;
Zong-liang Huo, Suwon-si, KR;
Shi-eun Kim, Seoul, KR;
Hong-Sik Yoon, Seongnam-si, KR;
In-Seok Yeo, Seoul, KR;
Seung-Jae Baik, Seoul, KR;
Zong-Liang Huo, Suwon-si, KR;
Shi-Eun Kim, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a DRAM device and a method of manufacturing the same, a multiple tunnel junction (MTJ) structure is provided, which includes conductive patterns and nonconductive patterns alternately stacked on each other. The nonconductive patterns have a band gap larger than a band gap of the conductive patterns. A gate insulation layer and a gate electrode are formed on a sidewall of the MTJ structure. A word line is connected with the MTJ structure, and a bit line is connected with one of top and bottom surfaces of the MTJ structure. A capacitor is connected with one of top and bottom surfaces of the MTJ structure that is not connected with the bit line. Current leakage in the DRAM device is reduced and a unit cells may be vertically stacked on the substrate, so a smaller surface area of the substrate is required for the DRAM device.