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Suwon, South Korea

Zong-liang Huo

This inventor holds 7 USPTO granted patents and 1 published patent application. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2007-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Zong-liang Huo. Retrieved from https://idiyas.com/inventor/zong-liang-huo

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 7 

% Patents Active = 14.3

Average Co-Inventor Count = 3.9

ph-index = 4

Forward Citations = 51(Granted Patents)


Company Filing History:

goldMedal7 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2007-2012

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7 patents (USPTO):Explore Patents
1. 8269268 - Charge trap flash memory device and memory card and system including the same (2012-09-18),
2. 7994003 - Nonvolatile memory device and method of fabricating the same (2011-08-09),
3. 7982256 - Semiconductor memory device having DRAM cell mode and non-volatile memory cell mode and operation method thereof (2011-07-19),
4. 7795659 - DRAM device and method of manufacturing the same (2010-09-14),
5. 7384841 - DRAM device and method of manufacturing the same (2008-06-10),
6. 7338862 - Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure (2008-03-04),
7. 7274066 - Semiconductor memory devices and methods of fabricating the same (2007-09-25),

Title: Zong-liang Huo: Innovator in Nonvolatile Memory Technology

Introduction

Zong-liang Huo is a prominent inventor based in Suwon-si, South Korea, known for his significant contributions to the field of nonvolatile memory technology. With a remarkable portfolio of seven patents, Zong-liang's work has greatly influenced advancements in memory devices, leading to improved performance and efficiency in electronics.

Latest Patents

Among his latest innovations are two notable patents: the "Charge Trap Flash Memory Device" and "Nonvolatile Memory Device and Method of Fabricating the Same." The Charge Trap Flash Memory Device includes a sophisticated structure featuring a tunnel insulating layer, a charge trap layer with plural trap layers, and a blocking insulating layer, all designed to enhance charge storage capacity by preventing loss of charges. The second patent focuses on a novel method of fabricating nonvolatile memory devices, which involves a meticulously layered dielectric structure that optimizes the performance and reliability of memory storage.

Career Highlights

Zong-liang Huo is currently employed at Samsung Electronics Co., Ltd., where he utilizes his expertise to drive innovation in memory technology. His work in the field has not only garnered him several patents but also helped position his company as a leader in the electronics industry. His innovative spirit and technical knowledge have made significant contributions to the evolution of memory devices.

Collaborations

During his career, Zong-liang has collaborated with talented coworkers such as In-Seok Yeo and Seung-Jae Baik. These collaborations have fostered a creative environment where groundbreaking ideas can flourish, leading to advances in technology that have wide-ranging applications across various electronics.

Conclusion

In conclusion, Zong-liang Huo's dedication to innovation in nonvolatile memory technology positions him as a vital contributor to the electronics industry. His patents and collaborations not only demonstrate his commitment to advancing technology but also highlight the importance of teamwork in achieving groundbreaking advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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