The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 19, 2011

Filed:

May. 16, 2007
Applicants:

Zong-liang Huo, Suwon-si, KR;

In-seok Yeo, Seoul, KR;

Inventors:

Zong-Liang Huo, Suwon-si, KR;

In-Seok Yeo, Seoul, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor memory device may have a DRAM cell mode and a non-volatile memory cell mode without a capacitor, including multiple transistors arranged in an array and having floating bodies, word lines connected to gate electrodes of the transistors, bit lines at a first side of the gate electrodes connected to drains of the transistors, source lines at a second side of the gate electrodes, different from the first side, and connected to sources of the transistors on the semiconductor substrate, and charge storage regions between the gate electrodes and the floating bodies.


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