The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 09, 2011
Filed:
Mar. 20, 2009
Byong-ju Kim, Suwon-si, KR;
Sun-jung Kim, Yongin-si, KR;
Zong-liang Huo, Suwon-si, KR;
Jun-kyu Yang, Seoul, KR;
Seon-ho JO, Gimhae-si, KR;
Han-mei Choi, Seoul, KR;
Young-sun Kim, Suwon-si, KR;
Byong-Ju Kim, Suwon-si, KR;
Sun-Jung Kim, Yongin-si, KR;
Zong-Liang Huo, Suwon-si, KR;
Jun-Kyu Yang, Seoul, KR;
Seon-Ho Jo, Gimhae-si, KR;
Han-Mei Choi, Seoul, KR;
Young-Sun Kim, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A method of fabricating a nonvolatile memory device includes forming a tunnel insulating layer on a semiconductor substrate, forming a charge storage layer on the tunnel insulating layer, forming a dielectric layer on the charge storage layer, the dielectric layer including a first aluminum oxide layer, a silicon oxide layer, and a second aluminum oxide layer sequentially stacked on the charge storage layer, and forming a gate electrode on the dielectric layer, the gate electrode directly contacting the second aluminum oxide layer of the dielectric layer.