The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2012
Filed:
Apr. 02, 2008
Zong-liang Huo, Suwon-si, KR;
In-seok Yeo, Seoul, KR;
Seung-hyun Lim, Yongin-si, KR;
Kyong-hee Joo, Seongnam-si, KR;
Jun-kyu Yang, Seoul, KR;
Zong-liang Huo, Suwon-si, KR;
In-seok Yeo, Seoul, KR;
Seung-Hyun Lim, Yongin-si, KR;
Kyong-hee Joo, Seongnam-si, KR;
Jun-kyu Yang, Seoul, KR;
Abstract
The device includes: a tunnel insulating layer, a charge trap layer; a blocking insulating layer; and a gate electrode sequentially formed on a substrate. The charge trap layer includes: plural trap layers comprising a first material having a first band gap energy level; spaced apart nanodots, each nanodot being at least partially surrounded by at least one of the trap layers, wherein the nanodots comprise a second material having a second band gap energy level that is lower than the first band gap energy level; and an intermediate blocking layer comprising a third material having a third band gap energy level that is higher than the first band gap energy level, formed between at least two of the trap layers. This structure prevents loss of charges from the charge trap layer and improves charge storage capacity.