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For the Inventor, By the Inventor

Seoul, South Korea

Seung-Jae Baik

USPTO Granted Patents = 15

Average Co-Inventor Count = 2.7

ph-index = 5

Forward Citations = 94(Granted Patents)


Location History:

  • Hwaseong-si, KR (2007)
  • Gyeonggi-do, KR (2006 - 2009)
  • Seoul, KR (2008 - 2013)

Company Filing History:

goldMedal15 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2013

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15 patents (USPTO):Explore Patents
1. 8460999 - Non-volatile memory devices with multiple layers having band gap relationships among the layers (2013-06-11),
2. 8405137 - Single transistor floating-body DRAM devices having vertical channel transistor structures (2013-03-26),
3. 8114735 - Method of manufacturing a non-volatile memory device (2012-02-14),
4. 8084316 - Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structures (2011-12-27),
5. 7973355 - Nonvolatile memory devices with multiple layers having band gap relationships among the layers (2011-07-05),
6. 7795659 - DRAM device and method of manufacturing the same (2010-09-14),
7. 7791130 - Non-volatile memory device and methods of forming the same (2010-09-07),
8. 7566615 - Methods of fabricating scalable two transistor memory devices (2009-07-28),
9. 7488648 - Methods of fabricating scalable two-transistor memory devices having metal source/drain regions (2009-02-10),
10. 7482206 - Semiconductor devices having nano-line channels and methods of fabricating the same (2009-01-27),
11. 7384841 - DRAM device and method of manufacturing the same (2008-06-10),
12. 7368788 - SRAM cells having inverters and access transistors therein with vertical fin-shaped active regions (2008-05-06),
13. 7338862 - Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structure (2008-03-04),
14. 7274066 - Semiconductor memory devices and methods of fabricating the same (2007-09-25),
15. 7042107 - Scalable two transistor memory devices (2006-05-09),

Title: **Seung-Jae Baik: Innovator in Non-Volatile Memory Technologies**

Introduction

Seung-Jae Baik, an accomplished inventor based in Seoul, South Korea, has significantly contributed to the field of semiconductor technology. With an impressive portfolio of 15 patents, Baik's work primarily focuses on innovative memory devices that enhance storage efficiency and performance in electronic applications.

Latest Patents

Baik's latest inventions include cutting-edge non-volatile memory devices characterized by their unique multi-layer band gap relationships. One of his notable patents describes a memory device that consists of a tunnel insulating layer positioned on a semiconductor substrate, with a charge storage layer above it. A blocking insulating layer and a control gate electrode complete the structure. Notably, this design features a first and second tunnel insulating layer stacked sequentially, with the second layer having a larger band gap than the first, optimizing efficiency and performance.

Additionally, Baik has developed single transistor floating-body DRAM devices that utilize vertical channel transistor structures. These innovative devices comprise a substrate with two isolated floating bodies, enhancing the functionality and performance of DRAM technology.

Career Highlights

Throughout his career, Seung-Jae Baik has built a reputable career at Samsung Electronics Co., Ltd., where he leverages his expertise to push boundaries in memory technology. His contributions have not only advanced the company’s innovations but also influence the broader technology landscape through the patents he holds.

Collaborations

Baik's success is also attributed to his collaborations with talented coworkers such as In-Seok Yeo and Hong-Sik Yoon. Together, they work on innovative projects that pave the way for the next generation of memory devices, sharing insights and expertise that enhance their research and development efforts.

Conclusion

In summary, Seung-Jae Baik stands out as a leading inventor in the realm of non-volatile memory devices. His significant contributions, evidenced by his 15 patents, demonstrate his dedication to advancing technology. As the electronics industry continues to evolve, Baik's innovations promise to play a crucial role in shaping the future of memory storage solutions.

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