The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7042107 B1

PDF
Full Text
Expired
Date of Patent:
May. 09, 2006

Filed:

Mar. 15, 2004
Applicant:

Seung-jae Baik, Gyeonggi-do, KR;

Inventor:

Seung-Jae Baik, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/88 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory device includes a semiconductor substrate, a first gate insulator on a first portion of a semiconductor substrate, a storage node on the first gate insulator, a tunnel junction barrier on the storage node and a data electrode on the layer tunnel junction barrier. The device further includes a second gate insulator layer on a sidewall of the tunnel junction barrier, a third gate insulator on a second portion of the substrate adjacent the tunnel junction barrier and a gate electrode on the second gate insulator and the third gate insulator. First and second impurity-doped regions are disposed in the substrate and are coupled by a channel through the first and second portions of the substrate. Fabrication of such a device is also describes.


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