The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7791130 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 07, 2010

Filed:

Aug. 12, 2008
Applicants:

Seung-jae Baik, Seoul, KR;

Si-young Choi, Seongnam-si, KR;

Ki-hyun Hwang, Seongnam-si, KR;

Inventors:

Seung-Jae Baik, Seoul, KR;

Si-Young Choi, Seongnam-si, KR;

Ki-Hyun Hwang, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract

Example embodiments provide a non-volatile memory device and methods of forming the same. The non-volatile memory device may define an active region in a semiconductor substrate, and may include a device isolation layer extending in a first direction, bit lines in the semiconductor substrate, the bit lines extending in a second direction which intersects the first direction; word lines extending in the first direction and covering the active region; and charge storage patterns between the word lines and active region, wherein the charge storage patterns may be in pairs on both edges of the bit lines, and a pair of charge storage patterns may be spaced apart from each other by the word lines.


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