The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2011

Filed:

May. 01, 2006
Applicants:

Zong-liang Huo, Gyeonggi-do, KR;

Seung-jae Baik, Seoul, KR;

In-seok Yeo, Seoul, KR;

Hong-sik Yoon, Seoul, KR;

Shi-eun Kim, Seoul, KR;

Inventors:

Zong-Liang Huo, Gyeonggi-do, KR;

Seung-Jae Baik, Seoul, KR;

In-Seok Yeo, Seoul, KR;

Hong-Sik Yoon, Seoul, KR;

Shi-Eun Kim, Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
Abstract

Single transistor floating-body DRAM devices have a vertical channel transistor structure. The DRAM devices include a substrate, and first and second floating bodies disposed on the substrate and isolated from each other. A source region and a drain region are disposed under and above each of the first and second floating bodies. A gate electrode is disposed between the first and second floating bodies. Methods of fabricating the single transistor floating-body DRAM devices are also provided.


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