Shi-Eun Kim

Title: Inventor Spotlight: Shi-Eun Kim

Introduction

Shi-Eun Kim is an accomplished inventor based in Seoul, South Korea. With a remarkable portfolio of six patents, he has made significant contributions to the field of semiconductor technology, particularly in dynamic random-access memory (DRAM) devices.

Latest Patents

His latest innovations focus on single transistor floating-body DRAM devices that feature vertical channel transistor structures. These advanced DRAM devices include a substrate and first and second floating bodies arranged on the substrate while being isolated from each other. The design incorporates a source region and a drain region located beneath and above each floating body, respectively. Additionally, a gate electrode is positioned between the two floating bodies. Shi-Eun Kim has also developed methods for fabricating these innovative DRAM devices.

Career Highlights

Shi-Eun Kim is currently affiliated with Samsung Electronics Co., Ltd., where he plays a vital role in the development of cutting-edge semiconductor technology. His work at Samsung has not only contributed to the company's innovation but also advanced the technological landscape in the industry.

Collaborations

Throughout his career, Shi-Eun Kim has collaborated with notable colleagues such as Seung-Jae Baik and In-Seok Yeo. These collaborations have facilitated the exchange of ideas and fostered a dynamic work environment, ultimately enhancing their collective contributions to semiconductor advancements.

Conclusion

Shi-Eun Kim's innovative work on single transistor floating-body DRAM devices demonstrates his commitment to pushing the boundaries of technology. His patents not only highlight his expertise but also promise to impact the future of memory storage solutions in the semiconductor industry.