The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 22, 2013
Filed:
Feb. 16, 2010
In-gyu Baek, Seoul, KR;
Hyun-jun Sim, Hwaseong-si, KR;
Hong-sik Yoon, Seongnam-si, KR;
Jin-shi Zhao, Hwaseong-si, KR;
Min-young Park, Suwon-si, KR;
In-Gyu Baek, Seoul, KR;
Hyun-Jun Sim, Hwaseong-si, KR;
Hong-Sik Yoon, Seongnam-si, KR;
Jin-Shi Zhao, Hwaseong-si, KR;
Min-Young Park, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Abstract
Multi-level nonvolatile memory devices using variable resistive elements, the multi-level nonvolatile memory devices including a word line, a bit line, and a multi-level memory cell coupled between the word line and the bit line, the multi-level memory cell having first resistance level and a second resistance level higher than the first resistance level when the first and second write biases having the same polarity are applied thereto, and a third resistance level and a fourth resistance level ranging between the first and second resistance levels, when third and fourth write biases having different polarities from each other are applied thereto.