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Hyun-Jun Sim

This inventor holds 14 USPTO granted patents and 2 published patent applications. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2010-2020.

USPTO Granted Patents = 14 (Patent Applications = 2)

% Patents Active = 78.6

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 65(Granted Patents)

Location History:

Gyeonggi-do, KR (2010 - 2014)
Hwaseong-si, KR (2011 - 2020)

Company Filing History:

14 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2010-2020

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14 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10797160 - Methods of fabricating semiconductor devices (2020-10-06),

2. 10411011 - Semiconductor devices and methods of manufacturing the same (2019-09-10),

3. 10043806 - Semiconductor devices and methods of manufacturing the same (2018-08-07),

4. 9397196 - Methods of manufacturing semiconductor devices that include performing hydrogen plasma treatment on insulating layer (2016-07-19),

5. 8759182 - Manufacturing method for semiconductor device (2014-06-24),

6. 8698281 - Nonvolatile memory devices that use resistance materials and internal electrodes (2014-04-15),

7. 8451645 - Variable resistance memory devices and methods of programming variable resistance memory devices (2013-05-28),

8. 8358527 - Multi-level nonvolatile memory devices using variable resistive elements (2013-01-22),

9. 8314003 - Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems (2012-11-20),

10. 8058097 - Methods of forming resistive memory devices (2011-11-15),

11. 7952163 - Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems (2011-05-31),

12. 7867902 - Methods of forming a contact structure (2011-01-11),

13. 7838863 - Semiconductor devices having resistive memory elements (2010-11-23),

14. 7750336 - Resistive memory devices and methods of forming resistive memory devices (2010-07-06),

Title: Hyun-Jun Sim: Innovator in Semiconductor Technology

Introduction

Hyun-Jun Sim is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His innovative approaches have paved the way for advancements in semiconductor device fabrication.

Latest Patents

Hyun-Jun Sim's latest patents include methods of fabricating semiconductor devices. One of his notable inventions describes a method that involves forming a fin structure on a substrate, creating an interface film with a specific thickness, and subsequently forming a gate dielectric film with a greater thickness. This process enhances the performance and reliability of semiconductor devices. Another patent focuses on the manufacturing of semiconductor devices, detailing the formation of a dummy gate electrode layer and a dummy gate mask layer. This method includes angled ion implantation to create a growth blocking layer, which is crucial for the etching process and the formation of a dummy gate electrode.

Career Highlights

Hyun-Jun Sim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of cutting-edge technologies that are essential for modern electronics.

Collaborations

Throughout his career, Hyun-Jun Sim has collaborated with notable colleagues, including In-gyu Baek and Jin-Shi Zhao. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of innovative solutions in semiconductor technology.

Conclusion

Hyun-Jun Sim's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His advancements continue to influence the future of electronics and semiconductor manufacturing.

Profile summary based on public USPTO records.

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