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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Hyun-Jun Sim

USPTO Granted Patents = 14 

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 65(Granted Patents)


Location History:

  • Gyeonggi-do, KR (2010 - 2014)
  • Hwaseong-si, KR (2011 - 2020)

Company Filing History:

goldMedal14 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2010-2020

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14 patents (USPTO):Explore Patents
1. 10797160 - Methods of fabricating semiconductor devices (2020-10-06),
2. 10411011 - Semiconductor devices and methods of manufacturing the same (2019-09-10),
3. 10043806 - Semiconductor devices and methods of manufacturing the same (2018-08-07),
4. 9397196 - Methods of manufacturing semiconductor devices that include performing hydrogen plasma treatment on insulating layer (2016-07-19),
5. 8759182 - Manufacturing method for semiconductor device (2014-06-24),
6. 8698281 - Nonvolatile memory devices that use resistance materials and internal electrodes (2014-04-15),
7. 8451645 - Variable resistance memory devices and methods of programming variable resistance memory devices (2013-05-28),
8. 8358527 - Multi-level nonvolatile memory devices using variable resistive elements (2013-01-22),
9. 8314003 - Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems (2012-11-20),
10. 8058097 - Methods of forming resistive memory devices (2011-11-15),
11. 7952163 - Nonvolatile memory devices that use resistance materials and internal electrodes, and related methods and processing systems (2011-05-31),
12. 7867902 - Methods of forming a contact structure (2011-01-11),
13. 7838863 - Semiconductor devices having resistive memory elements (2010-11-23),
14. 7750336 - Resistive memory devices and methods of forming resistive memory devices (2010-07-06),

Title: Hyun-Jun Sim: Innovator in Semiconductor Technology

Introduction

Hyun-Jun Sim is a prominent inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of semiconductor technology, holding a total of 14 patents. His innovative approaches have paved the way for advancements in semiconductor device fabrication.

Latest Patents

Hyun-Jun Sim's latest patents include methods of fabricating semiconductor devices. One of his notable inventions describes a method that involves forming a fin structure on a substrate, creating an interface film with a specific thickness, and subsequently forming a gate dielectric film with a greater thickness. This process enhances the performance and reliability of semiconductor devices. Another patent focuses on the manufacturing of semiconductor devices, detailing the formation of a dummy gate electrode layer and a dummy gate mask layer. This method includes angled ion implantation to create a growth blocking layer, which is crucial for the etching process and the formation of a dummy gate electrode.

Career Highlights

Hyun-Jun Sim is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of semiconductor innovation, contributing to the development of cutting-edge technologies that are essential for modern electronics.

Collaborations

Throughout his career, Hyun-Jun Sim has collaborated with notable colleagues, including In-gyu Baek and Jin-Shi Zhao. These collaborations have fostered a creative environment that encourages the exchange of ideas and the development of innovative solutions in semiconductor technology.

Conclusion

Hyun-Jun Sim's contributions to semiconductor technology through his patents and work at Samsung Electronics Co., Ltd. highlight his role as a key innovator in the field. His advancements continue to influence the future of electronics and semiconductor manufacturing.

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