The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 28, 2013
Filed:
Aug. 06, 2010
Applicants:
Hong-sik Yoon, Seongnam-si, KR;
Min-young Park, Suwon-si, KR;
In-gyu Baek, Seoul, KR;
Hyun-jun Sim, Hwaseong-si, KR;
Jin-shi Zhao, Hwaseong-si, KR;
Inventors:
Hong-Sik Yoon, Seongnam-si, KR;
Min-Young Park, Suwon-si, KR;
In-Gyu Baek, Seoul, KR;
Hyun-Jun Sim, Hwaseong-si, KR;
Jin-Shi Zhao, Hwaseong-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A variable resistance memory device includes a variable resistance memory cell, and a by-pass circuit configured to electrically by-pass a programming pulse supplied to the variable resistance memory cell after a resistive state of the variable resistance memory cell has changed in response to the programming pulse.