The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

H01L 29/15 (2006.01); H01L 31/0312 (2006.01); H01L 27/092 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/167 (2006.01); H01L 21/8238 (2006.01);

U.S. Cl.

CPC ...

H01L 27/0924 (2013.01); H01L 27/092 (2013.01); H01L 29/161 (2013.01); H01L 29/167 (2013.01); H01L 29/1608 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01);

Abstract

A dummy gate electrode layer and a dummy gate mask layer may be formed on a substrate. The dummy gate mask layer may be patterned to form a dummy gate mask so that a portion of the dummy gate electrode layer is exposed. Ions may be implanted into the exposed portion of the dummy gate electrode layer and a portion of the dummy gate electrode layer adjacent thereto by an angled ion implantation to form a growth blocking layer in the dummy gate electrode layer. The dummy gate electrode layer may be etched using the dummy gate mask as an etching mask to form a dummy gate electrode. A spacer may be formed on side surfaces of a dummy gate structure including the dummy gate electrode and the dummy gate mask. An SEG process may be performed to form an epitaxial layer.

Find Patent Forward Citations