The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
May. 20, 2009
Seong-ho Moon, Gyeonggi-do, KR;
Hong-sik Yoon, Gyeonggi-do, KR;
Subramanya Mayya, Gyeonggi-do, KR;
Sun-woo Lee, Incheon, KR;
Dong-woo Kim, Incheon, KR;
Xiaofeng Wang, Gyeonggi-do, KR;
Seong-Ho Moon, Gyeonggi-do, KR;
Hong-Sik Yoon, Gyeonggi-do, KR;
Subramanya Mayya, Gyeonggi-do, KR;
Sun-Woo Lee, Incheon, KR;
Dong-Woo Kim, Incheon, KR;
Xiaofeng Wang, Gyeonggi-do, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.