The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2009
Filed:
Aug. 01, 2007
Hong-sik Yoon, Seoul, KR;
Young-moon Choi, Seoul, KR;
Sun-woo Lee, Incheon, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
An embodiment includes a transistor and a method of manufacturing the transistor that includes carbon nano-tubes. The physical behavior of the carbon nano-tubes, particularly a bending action that alters a normally linear configuration, is affected by elements of the transistor, such as a space between the carbon nano-tube and a conductor. The space is formed by removing a spacer. A dimension of the spacer between the carbon nano-tube and the conductor is efficiently controlled by adjusting its width. An operation voltage of the transistor relates to the physical behavior of the carbon nano-tubes, and thus to the dimensions of the spacer.