The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 29, 2012
Filed:
Oct. 13, 2009
Gyu-hwan OH, Hwaseong-si, KR;
Hyeung-geun an, Hwaseongi-si, KR;
Soon-oh Park, Suwon-si, KR;
Dong-ho Ahn, Suwon-si, KR;
Young-lim Park, Hwaseong-si, KR;
Gyu-Hwan Oh, Hwaseong-si, KR;
Hyeung-Geun An, Hwaseongi-si, KR;
Soon-Oh Park, Suwon-si, KR;
Dong-Ho Ahn, Suwon-si, KR;
Young-Lim Park, Hwaseong-si, KR;
Abstract
Provided is a method of forming a semiconductor memory cell in which in order to store two bits or more data in a memory cell, three or more bottom electrode contacts (BECs) and phase-change materials (GST) have a parallel structure on a single contact plug (CP) and set resistances are changed depending on thicknesses (S), lengths (L) or resistivities (ρ) of the three or more bottom electrode contacts, so that a reset resistance and three different set resistances enable data other than in set and reset states to be stored. Also, a method of forming a memory cell in which three or more phase-change materials (GST) have a parallel structure on a single bottom electrode contact, and the phase-change materials have different set resistances depending on composition ratio or type, so that four or more different resistances can be implemented is provided.