Growing community of inventors

Suwon-si, South Korea

Dong-ho Ahn

Average Co-Inventor Count = 3.60

ph-index = 7

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 175

Dong-ho AhnHideki Horii (5 patents)Dong-ho AhnHyeong-Geun An (4 patents)Dong-ho AhnSoon-Oh Park (3 patents)Dong-ho AhnSung-eui Kim (3 patents)Dong-ho AhnJong-Chan Shin (3 patents)Dong-ho AhnYoung-Lim Park (2 patents)Dong-ho AhnJun-Soo Bae (2 patents)Dong-ho AhnIn-seak Hwang (2 patents)Dong-ho AhnMoon-han Park (2 patents)Dong-ho AhnGyu-Hwan Oh (2 patents)Dong-ho AhnSug-hun Hong (2 patents)Dong-ho AhnYu-gyun Shin (2 patents)Dong-ho AhnYoung-Hyun Kim (2 patents)Dong-ho AhnTai-su Park (2 patents)Dong-ho AhnJin-ho Oh (2 patents)Dong-ho AhnKeum-joo Lee (2 patents)Dong-ho AhnYoung-sun Koh (2 patents)Dong-ho AhnStephen J Hudgens (1 patent)Dong-ho AhnYoung-woo Park (1 patent)Dong-ho AhnJeong-Hee Park (1 patent)Dong-ho AhnJin-il Lee (1 patent)Dong-ho AhnJa-hum Ku (1 patent)Dong-ho AhnHee-Ju Shin (1 patent)Dong-ho AhnJae-Yoon Yoo (1 patent)Dong-ho AhnYun-gi Kim (1 patent)Dong-ho AhnJonathan D Maimon (1 patent)Dong-ho AhnCarl Schell (1 patent)Dong-ho AhnChul-joon Choi (1 patent)Dong-ho AhnChul-sung Kim (1 patent)Dong-ho AhnHan-mil Kim (1 patent)Dong-ho AhnSeong-joon Ahn (1 patent)Dong-ho AhnMin-wook Hwang (1 patent)Dong-ho AhnHeo-ju Shin (1 patent)Dong-ho AhnHyeung-Geun An (1 patent)Dong-ho AhnJun-soo Bae (1 patent)Dong-ho AhnJong-kook Song (1 patent)Dong-ho AhnDong-ho Ahn (16 patents)Hideki HoriiHideki Horii (51 patents)Hyeong-Geun AnHyeong-Geun An (23 patents)Soon-Oh ParkSoon-Oh Park (24 patents)Sung-eui KimSung-eui Kim (13 patents)Jong-Chan ShinJong-Chan Shin (9 patents)Young-Lim ParkYoung-Lim Park (42 patents)Jun-Soo BaeJun-Soo Bae (34 patents)In-seak HwangIn-seak Hwang (25 patents)Moon-han ParkMoon-han Park (23 patents)Gyu-Hwan OhGyu-Hwan Oh (23 patents)Sug-hun HongSug-hun Hong (13 patents)Yu-gyun ShinYu-gyun Shin (12 patents)Young-Hyun KimYoung-Hyun Kim (11 patents)Tai-su ParkTai-su Park (11 patents)Jin-ho OhJin-ho Oh (6 patents)Keum-joo LeeKeum-joo Lee (3 patents)Young-sun KohYoung-sun Koh (2 patents)Stephen J HudgensStephen J Hudgens (70 patents)Young-woo ParkYoung-woo Park (31 patents)Jeong-Hee ParkJeong-Hee Park (29 patents)Jin-il LeeJin-il Lee (26 patents)Ja-hum KuJa-hum Ku (20 patents)Hee-Ju ShinHee-Ju Shin (15 patents)Jae-Yoon YooJae-Yoon Yoo (14 patents)Yun-gi KimYun-gi Kim (11 patents)Jonathan D MaimonJonathan D Maimon (6 patents)Carl SchellCarl Schell (6 patents)Chul-joon ChoiChul-joon Choi (5 patents)Chul-sung KimChul-sung Kim (3 patents)Han-mil KimHan-mil Kim (1 patent)Seong-joon AhnSeong-joon Ahn (1 patent)Min-wook HwangMin-wook Hwang (1 patent)Heo-ju ShinHeo-ju Shin (1 patent)Hyeung-Geun AnHyeung-Geun An (1 patent)Jun-soo BaeJun-soo Bae (1 patent)Jong-kook SongJong-kook Song (1 patent)
..
Inventor’s number of patents
..
Strength of working relationships

Company Filing History:

1. Samsung Electronics Co., Ltd. (16 from 131,214 patents)

2. Ovonyx Inc. (1 from 262 patents)


16 patents:

1. 8299450 - Non-volatile memory device including phase-change material

2. 8222625 - Non-volatile memory device including phase-change material

3. 8187918 - Methods of forming multi-level cell of semiconductor memory

4. 8021977 - Methods of forming contact structures and semiconductor devices fabricated using contact structures

5. 7800095 - Phase-change memory device having phase change material pattern shared between adjacent cells and electronic product including the phase-change memory

6. 7767568 - Phase change memory device and method of fabricating the same

7. 7638788 - Phase change memory device and method of forming the same

8. 6717231 - Trench isolation regions having recess-inhibiting layers therein that protect against overetching

9. 6461937 - Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetching

10. 6383877 - Method of forming T-shaped isolation layer, method of forming elevated salicide source/drain region using the same, and semiconductor device having T-shaped isolation layer

11. 6159823 - Trench isolation method of semiconductor device

12. 6093622 - Isolation method of semiconductor device using second pad oxide layer

13. 5926721 - Isolation method for semiconductor device using selective epitaxial

14. 5837595 - Methods of forming field oxide isolation regions with reduced

15. 5804491 - Combined field/trench isolation region fabrication methods

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12/5/2025
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