The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
Nov. 16, 2007
Hyeong-geun an, Hwaseong-si, KR;
Hideki Horii, Gangnam-gu, KR;
Jong-chan Shin, Seongnam-si, KR;
Dong-ho Ahn, Suwon-si, KR;
Jun-soo Bae, Hawseong-si, KR;
Hyeong-geun An, Hwaseong-si, KR;
Hideki Horii, Gangnam-gu, KR;
Jong-chan Shin, Seongnam-si, KR;
Dong-ho Ahn, Suwon-si, KR;
Jun-soo Bae, Hawseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a phase-change memory device including a phase-change material pattern of which strips are shared by neighboring cells. The phase-change memory device includes a plurality of bottom electrodes arranged in a matrix array. The phase-change material pattern is formed on the bottom electrodes, and the strips of the phase-change material pattern are electrically connected to the bottom electrodes. Each strip of the phase-change material pattern is connected to at least two diagonally neighboring bottom electrodes of the bottom electrodes.