The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Feb. 01, 2010
Dong-ho Ahn, Suwon-si, KR;
Hideki Horii, Seoul, KR;
Soon-oh Park, Suwon-si, KR;
Young-hyun Kim, Seoul, KR;
Heo-ju Shin, Yongin-si, KR;
Jin-ho OH, Seongnam-si, KR;
Dong-ho Ahn, Suwon-si, KR;
Hideki Horii, Seoul, KR;
Soon-oh Park, Suwon-si, KR;
Young-hyun Kim, Seoul, KR;
Heo-ju Shin, Yongin-si, KR;
Jin-ho Oh, Seongnam-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A non-volatile memory device includes a lower electrode, a phase-change material layer formed on the lower electrode so as to be electrically connected to the lower electrode, and an upper electrode formed on the phase-change material layer so as to be electrically connected to the phase-change material layer. The phase-change material layer includes a phase-change material including a composition represented by the formula (I)(IIIIIIV), where I is at least one of As and Se, II is at least one of Ge, Si and Sn, III is at least one of Sb and Bi, and IV is at least one of Te and Se, and where 0.001≦A≦0.3, 0.001≦X≦0.3, 0.001≦Y≦0.8, 0.1≦Z≦0.8, and X+Y+Z=1.