Yongin, South Korea

Heo-ju Shin

This inventor holds 1 USPTO granted patent. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heo-ju Shin. Retrieved from https://idiyas.com/inventor/heo-ju-shin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2012

Loading Chart...
1 patent (USPTO):Explore Patents

Title: Heo-ju Shin: Innovator in Non-Volatile Memory Technology

Introduction

Heo-ju Shin is a prominent inventor based in Yongin-si, South Korea. He is known for his contributions to the field of non-volatile memory devices. His innovative work has led to the development of advanced technologies that enhance data storage solutions.

Latest Patents

Heo-ju Shin holds a patent for a non-volatile memory device that includes a phase-change material. This device features a lower electrode, a phase-change material layer, and an upper electrode. The phase-change material layer is designed to be electrically connected to both the lower and upper electrodes. The composition of the phase-change material is represented by a specific formula, which includes elements such as As, Se, Ge, Si, Sn, Sb, Bi, Te, and Se, with defined ranges for their proportions.

Career Highlights

Heo-ju Shin is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of memory technology innovations. He has made significant contributions that have impacted the industry positively.

Collaborations

Heo-ju Shin has collaborated with notable colleagues, including Dong-ho Ahn and Hideki Horii. These collaborations have fostered an environment of innovation and creativity, leading to advancements in memory technology.

Conclusion

Heo-ju Shin is a key figure in the development of non-volatile memory devices, with a focus on phase-change materials. His contributions to Samsung Electronics Co., Ltd. and the field of memory technology are noteworthy. His innovative spirit continues to drive advancements in data storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…