The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 29, 2009

Filed:

Oct. 16, 2007
Applicants:

Dong-ho Ahn, Suwon-si, KR;

Hideki Horii, Seoul, KR;

Jong-chan Shin, Seongnam-si, KR;

Jun-soo Bae, Hwaseong-si, KR;

Hyeong-geun an, Hwaseong-si, KR;

Inventors:

Dong-Ho Ahn, Suwon-si, KR;

Hideki Horii, Seoul, KR;

Jong-Chan Shin, Seongnam-si, KR;

Jun-Soo Bae, Hwaseong-si, KR;

Hyeong-Geun An, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided are a phase change memory device and a method of forming the same. According to the phase change memory, a first plug electrode and a second plug electrode are spaced apart from each other in a mold insulating layer. A phase change pattern is disposed on the mold insulating layer. The phase change pattern contacts a top of the first plug electrode and a first potion of a top of the second plug electrode. An interconnection is electrically connected to a second portion of the top of the second plug electrode.


Find Patent Forward Citations

Ahn, Dong-Ho. (2009). Phase change memory device and method of forming the same (U.S. Patent No. 7638788). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7638788

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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