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For the Inventor, By the Inventor

Hwaseong-si, South Korea

Jun-Soo Bae

USPTO Granted Patents = 34

Average Co-Inventor Count = 4.1

ph-index = 12

Forward Citations = 514(Granted Patents)


Location History:

  • Hwasoeng-si, KR (2007)
  • Hwasung, KR (2008)
  • Gyeonggi-do, KR (2006 - 2013)
  • Hwaseong-si, KR (2008 - 2018)

Company Filing History:

goldMedal34 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2018

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34 patents (USPTO):
1. 10164173 - Magnetic random access memory devices and methods of manufacturing the same (2018-12-25),
2. 9761792 - Magnetic random access memory devices and methods of manufacturing the same (2017-09-12),
3. 8772121 - Phase change memory devices and methods of manufacturing the same (2014-07-08),
4. 8513051 - Methods of forming phase-changeable memory devices including an adiabatic layer (2013-08-20),
5. 8238147 - Multi-level phase change memory device, program method thereof, and method and system including the same (2012-08-07),
6. 8237141 - Non-volatile memory device including phase-change material (2012-08-07),
7. 8168535 - Method fabricating semiconductor device using multiple polishing processes (2012-05-01),
8. 8143653 - Variable resistance memory device and system thereof (2012-03-27),
9. 8139432 - Variable resistance memory device and system thereof (2012-03-20),
10. 8134866 - Phase change memory devices and systems, and related programming methods (2012-03-13),
11. 8116117 - Method of driving multi-level variable resistive memory device and multi-level variable resistive memory device (2012-02-14),
12. 8050084 - Nonvolatile memory device, storage system having the same, and method of driving the nonvolatile memory device (2011-11-01),
13. 8035145 - Magnetic memory device (2011-10-11),
14. 7943918 - Multi-layer phase-changeable memory devices (2011-05-17),
15. 7787278 - Resistance variable memory device and operating method thereof (2010-08-31),

Title: Jun-Soo Bae: Pioneer in Magnetic Random Access Memory Technology

Introduction

Jun-Soo Bae, a prominent inventor based in Hwaseong-si, South Korea, has made significant contributions to the field of magnetic random access memory (MRAM) technology. With an impressive portfolio of 34 patents, Bae continues to push the boundaries of innovation within the tech industry.

Latest Patents

Among his latest inventions, Bae has developed advanced MRAM devices and methods of manufacturing them. These innovations include intricate designs featuring at least one first magnetic material pattern positioned on a substrate and at least one second magnetic material pattern formed on the first. A notable component is the tunnel barrier layer pattern that exists between these two magnetic material patterns, enhancing the performance of the devices. Furthermore, a unique aspect of his design is that the width of the top surface of the first magnetic material pattern is intentionally made less than the width of the bottom surface of the second magnetic material pattern, showcasing a refined approach to MRAM technology.

Career Highlights

Jun-Soo Bae's career is marked by his association with Samsung Electronics Co., Ltd., a leading global technology company known for its innovations in various fields. His work at Samsung has solidified his status as a key player in the advancement of memory technology and its applications.

Collaborations

Bae’s contributions to the field are also supported through collaborations with talented coworkers such as Jang-Eun Lee and Hyun-Jo Kim. Together, they have fostered an environment of innovation, facilitating the development of cutting-edge technologies in the realm of magnetic memory devices.

Conclusion

In summary, Jun-Soo Bae's relentless pursuit of innovation and excellence in MRAM technology positions him as a notable inventor in the electronics industry. His impressive patent portfolio not only reflects his expert knowledge but also his commitment to advancing technology for future applications. As he continues to collaborate with industry peers, the impact of his work is sure to resonate within the field for years to come.

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