The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2013
Filed:
Feb. 19, 2010
Applicants:
Yong-ho Ha, Gyeonggi-do, KR;
Bong-jin Kuh, Gyeonggi-do, KR;
Ji-hye Yi, Gyeonggi-do, KR;
Jun-soo Bae, Gyeonggi-do, KR;
Inventors:
Yong-Ho Ha, Gyeonggi-do, KR;
Bong-Jin Kuh, Gyeonggi-do, KR;
Ji-Hye Yi, Gyeonggi-do, KR;
Jun-Soo Bae, Gyeonggi-do, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8239 (2006.01);
U.S. Cl.
CPC ...
Abstract
Phase-changeable memory devices include a lower electrode electrically connected to an impurity region of a transistor in a substrate and a programming layer pattern including a first phase-changeable material on the lower electrode. An adiabatic layer pattern including a material having a lower thermal conductivity than the first phase-changeable material is on the programming layer pattern and an upper electrode is on the adiabatic layer pattern.