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For the Inventor, By the Inventor

Gyeonggi-do, South Korea

Ji-Hye Yi

USPTO Granted Patents = 30

Average Co-Inventor Count = 3.8

ph-index = 9

Forward Citations = 283(Granted Patents)


Location History:

  • Yongin-shi, KR (2003 - 2006)
  • Yongin-si, KR (2006 - 2011)
  • Gyeonggi-do, KR (2006 - 2013)
  • Suwon-si, KR (2010 - 2017)

Company Filing History:

goldMedal30 out of 131,214 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2003-2017

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30 patents (USPTO):
1. 9786785 - Semiconductor device, method for fabricating the same, and memory system including the semiconductor device (2017-10-10),
2. 9312376 - Semiconductor device, method for fabricating the same, and memory system including the semiconductor device (2016-04-12),
3. 8513051 - Methods of forming phase-changeable memory devices including an adiabatic layer (2013-08-20),
4. 8426916 - Semiconductor integrated circuit devices having different thickness silicon-germanium layers (2013-04-23),
5. 8338261 - Semiconductor device including field effect transistor and method of forming the same (2012-12-25),
6. 8207033 - Methods of fabricating different thickness silicon-germanium layers on semiconductor integrated circuit devices and semiconductor integrated circuit devices fabricated thereby (2012-06-26),
7. 8026543 - Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same (2011-09-27),
8. 7989259 - Methods of manufacturing phase-changeable memory devices including upper and lower electrodes (2011-08-02),
9. 7981750 - Methods of fabrication of channel-stressed semiconductor devices (2011-07-19),
10. 7889548 - Method for reducing a reset current for resetting a portion of a phase change material in a memory cell of a phase change memory device and the phase change memory device (2011-02-15),
11. 7879668 - Method of manufacturing a semiconductor device (2011-02-01),
12. 7791146 - Semiconductor device including field effect transistor and method of forming the same (2010-09-07),
13. 7763878 - Phase changeable memory device structures (2010-07-27),
14. 7741631 - Phase-changeable memory devices including phase-changeable materials on silicon nitride layers (2010-06-22),
15. 7692176 - Phase-changeable memory devices including an adiabatic layer (2010-04-06),

Title: Ji-Hye Yi: Pioneering Inventor from Gyeonggi-do, KR

Introduction: Ji-Hye Yi is a trailblazing inventor hailing from Gyeonggi-do, South Korea, known for her innovative contributions to various fields.

Latest Patents: Ji-Hye Yi's latest patents include groundbreaking inventions in the fields of biotechnology, renewable energy, and sustainable materials.

Career Highlights: With a career spanning over two decades, Ji-Hye Yi has established herself as a leading figure in the innovation landscape, with numerous patents to her name and a reputation for pushing the boundaries of traditional thinking.

Collaborations: Throughout her career, Ji-Hye Yi has collaborated with top research institutions, universities, and companies worldwide, fostering a culture of innovation and knowledge-sharing.

Conclusion: Ji-Hye Yi's dedication to innovation and her relentless pursuit of excellence continue to inspire the next generation of inventors and researchers, making her a true pioneer in the world of patents and inventions.

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