The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 01, 2011
Filed:
Dec. 23, 2008
Hwa-sung Rhee, Seongnam-si, KR;
Ho Lee, Cheonan-si, KR;
Myung-sun Kim, Hwaseong-si, KR;
Ji-hye Yi, Suwon-si, KR;
Hwa-Sung Rhee, Seongnam-si, KR;
Ho Lee, Cheonan-si, KR;
Myung-Sun Kim, Hwaseong-si, KR;
Ji-Hye Yi, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
In a method of manufacturing a semiconductor device, a first gate electrode and a second gate electrode are formed in a first area and a second area of a substrate. Non-crystalline regions are formed in the first area of the substrate adjacent the first gate electrode. A layer having a first stress is formed on the substrate and the first and the second gate electrodes. A mask is formed on a first portion of the layer in the first area of the substrate to expose a second portion of the layer in the second area. The second portion is etched to form a sacrificial spacer on a sidewall of the second gate electrode. The second area of the substrate is partially etched using the mask, the second gate electrode and the sacrificial spacer, to form recesses in the second area of the substrate adjacent the second gate electrode. Patterns having a second stress are formed in the recesses.