The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Dec. 07, 2009
Woo-yeong Cho, Suwon-si, KR;
Ki-sung Kim, Seoul, KR;
Du-eung Kim, Yongin-si, KR;
Kwang-jin Lee, Hwaseong-si, KR;
Jun-soo Bae, Hwaseong-si, KR;
Woo-Yeong Cho, Suwon-si, KR;
Ki-Sung Kim, Seoul, KR;
Du-Eung Kim, Yongin-si, KR;
Kwang-Jin Lee, Hwaseong-si, KR;
Jun-Soo Bae, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
Disclosed is a method of driving a multi-level variable resistive memory device. A method of driving a multi-level variable resistive memory device includes supplying a write current to a variable resistive memory cell so as to change resistance of the variable resistive memory cell, verifying whether or not changed resistance enters a predetermined resistance window, the intended resistance window depending on the resistance of reference cells, and supplying a write current having an increased or decreased amount from the write current supplied most recently on the basis of the verification result so as to change resistance of the variable resistive memory cell.