The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2012
Filed:
Nov. 16, 2009
Woo-yeong Cho, Suwon-si, KR;
Jong-soo Seo, Hwaseong-si, KR;
Young-kug Moon, Suwon-si, KR;
Jun-soo Bae, Hwaseong-si, KR;
Kwang-jin Lee, Hwaseong-si, KR;
Woo-Yeong Cho, Suwon-si, KR;
Jong-Soo Seo, Hwaseong-si, KR;
Young-Kug Moon, Suwon-si, KR;
Jun-Soo Bae, Hwaseong-si, KR;
Kwang-Jin Lee, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A phase-change random access memory device is provided. The phase-change random access memory device includes a global bit line connected to a write circuit and a read circuit, multiple local bit lines, each being connected to multiple phase-change memory cells, and multiple column select transistors selectively connecting the global bit line with each of the multiple local bit lines, each column select transistor having a resistance that varies depending on its distance from the write circuit and the read circuit.