The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2011

Filed:

Sep. 29, 2010
Applicants:

Jun-soo Bae, Hwaseong-si, KR;

Kwang-jin Lee, Hwaseong-si, KR;

Beak-hyung Cho, Hwaseong-si, KR;

Inventors:

Jun-Soo Bae, Hwaseong-si, KR;

Kwang-Jin Lee, Hwaseong-si, KR;

Beak-Hyung Cho, Hwaseong-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device includes a memory cell array including a plurality of nonvolatile memory cells each having a resistance corresponding to one of a plurality of first resistance distributions, a temperature compensation circuit including one or more reference cells each having a resistance corresponding to one among one or more second resistance distributions, and a data read circuit including a compensation unit and a sense amplifier, the compensation unit being adapted to supply compensation current to a sensing node, an amount of the compensation current varying based on the resistance of each reference cell, and the sense amplifier being adapted to compare the level of the sensing node with a reference level and to output a comparison result.


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