The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 17, 2011
Filed:
Sep. 28, 2009
Jeong-hee Park, Gyeonggi-do, KR;
Ju-chul Park, Gyeonggi-do, KR;
Jun-soo Bae, Gyeonggi-do, KR;
Bong-jin Kuh, Gyeonggi-do, KR;
Yong-ho Ha, Gyeonggi-do, KR;
Jeong-Hee Park, Gyeonggi-do, KR;
Ju-Chul Park, Gyeonggi-do, KR;
Jun-Soo Bae, Gyeonggi-do, KR;
Bong-Jin Kuh, Gyeonggi-do, KR;
Yong-Ho Ha, Gyeonggi-do, KR;
Abstract
A phase-changeable memory device includes a phase-changeable material pattern and first and second electrodes electrically connected to the phase-changeable material pattern. The first and second electrodes are configured to provide an electrical signal to the phase-changeable material pattern. The phase-changeable material pattern includes a first phase-changeable material layer and a second phase-changeable material layer. The first and second phase-changeable material patterns have different chemical, physical, and/or electrical characteristics. For example, the second phase-changeable material layer may have a greater resistivity than the first phase-changeable material layer. For instance, the first phase-changeable material layer may include nitrogen at a first concentration, and the second phase-changeable material layer may include nitrogen at a second concentration that is greater than the first concentration. Related devices and fabrication methods are also discussed.