The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2017
Filed:
Oct. 20, 2015
Kyu-man Hwang, Hwaseong-si, KR;
Shi-jung Kim, Yongin-si, KR;
Mi-lim Park, Suwon-si, KR;
Jun-soo Bae, Hwaseong-si, KR;
Seung-woo Lee, Busan, KR;
Kyu-Man Hwang, Hwaseong-si, KR;
Shi-Jung Kim, Yongin-si, KR;
Mi-Lim Park, Suwon-si, KR;
Jun-Soo Bae, Hwaseong-si, KR;
Seung-Woo Lee, Busan, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.