Company Filing History:
Years Active: 2014-2018
Title: The Innovations of Kyu-Man Hwang
Introduction
Kyu-Man Hwang is a notable inventor based in Hwaseong-si, South Korea. He has made significant contributions to the field of magnetic random access memory (MRAM) technology. With a total of 4 patents to his name, Hwang continues to push the boundaries of innovation in electronics.
Latest Patents
Hwang's latest patents focus on advancements in magnetic random access memory devices and methods of manufacturing them. These MRAM devices include at least one first magnetic material pattern on a substrate, along with at least one second magnetic material pattern positioned on the first. A tunnel barrier layer pattern is also incorporated between these two magnetic material patterns. Notably, the width of the top surface of the first magnetic material pattern is designed to be less than that of the bottom surface of the second magnetic material pattern. This innovative design enhances the performance and efficiency of MRAM technology.
Career Highlights
Kyu-Man Hwang is currently employed at Samsung Electronics Co., Ltd., a leading company in the technology sector. His work at Samsung has allowed him to be at the forefront of research and development in memory technologies. Hwang's expertise and innovative mindset have contributed to the company's advancements in electronic memory solutions.
Collaborations
Hwang has collaborated with talented coworkers such as Jun-Soo Bae and Shi-Jung Kim. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies in the field of memory devices.
Conclusion
Kyu-Man Hwang is a prominent inventor whose work in magnetic random access memory technology has made a significant impact in the electronics industry. His innovative patents and collaborations highlight his dedication to advancing technology. Hwang's contributions continue to shape the future of memory devices.