The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2017
Filed:
Jun. 07, 2016
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Jinhye Bae, Suwon-si, KR;
Wonjun Lee, Seoul, KR;
Yoonsung Han, Seoul, KR;
Hoon Han, Anyang-si, KR;
Kyu-Man Hwang, Hwaseong-si, KR;
Yongsun Ko, Suwon-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 43/12 (2006.01); H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 43/12 (2013.01); H01L 22/12 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.