Samsung Electronics Co., Ltd.

Kyu-Man Hwang

Jun-Soo Bae

Seung-Woo Lee

Mi-Lim Park

Shi-Jung Kim

Wonjun Lee

Hoon Hee Han

Yongsun Ko

Sung-Un Kwon

Kwang-Ho Park

Jinhye Bae

Yoonsung Han

Magnetic random access memory (MRAM) devices, and methods of manufacturing the same, include at least one first magnetic material pattern on a substrate, at least one second magnetic material pattern on the at least one first magnetic material pattern, and at least one tunnel barrier layer pattern between the at least one first magnetic material pattern and the at least one second magnetic material pattern. A width of a top surface of the at least one first magnetic material pattern may be less than a width of a bottom surface of the at least one second magnetic material pattern.

Magnetic random access memory devices and methods of manufacturing the same

Provided is a method of manufacturing a semiconductor device. The method of manufacturing the semiconductor device includes forming magneto tunnel layers, forming a hard mask on the magneto tunnel layers, etching the magneto tunnel layers to form a magneto tunnel junction, wherein etching by-products are formed on sidewalls of the magneto tunnel junction, performing chemical treatment on the etching by-products to convert the etching by-products into a chemical reactant; and inspecting the chemical reactant.

Method of inspecting by-products and method of manufacturing semiconductor device using the same

A method of manufacturing a phase change memory device includes forming a lower electrode layer pattern and an insulating interlayer covering the lower electrode layer pattern, forming a first opening in the insulating interlayer to expose the lower electrode layer pattern, forming an oxide layer pattern on the sidewall of the first opening and a lower electrode under the oxide layer pattern by partially removing the oxide layer and the lower electrode layer pattern, forming an insulation layer filling a remaining portion of the first opening, removing the oxide layer pattern by a wet etching process to form a second opening, and forming a phase change material pattern on the lower electrode such that the phase change material pattern fills the second opening.

Phase change memory devices and methods of manufacturing the same

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Hwaseong-si, South Korea

Kyu-Man Hwang