The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2010
Filed:
Sep. 28, 2007
Hyeong-geun an, Hwaseong-si, KR;
Hideki Horii, Seoul, KR;
Jong-chan Shin, Seongnam-si, KR;
Dong-ho Ahn, Suwon-si, KR;
Jun-soo Bae, Hwaseong-si, KR;
Jeong-hee Park, Hwaseong-si, KR;
Hyeong-Geun An, Hwaseong-si, KR;
Hideki Horii, Seoul, KR;
Jong-Chan Shin, Seongnam-si, KR;
Dong-Ho Ahn, Suwon-si, KR;
Jun-Soo Bae, Hwaseong-si, KR;
Jeong-Hee Park, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A phase change memory device and method of manufacturing the same is provided. A first electrode having a first surface is provided on a substrate. A second electrode having a second surface at a different level from the first surface is on the substrate. The second electrode may be spaced apart from the first electrode. A third electrode may be formed corresponding to the first electrode. A fourth electrode may be formed corresponding to the second electrode. A first phase change pattern may be interposed between the first surface and the third electrode. A second phase change pattern may be interposed between the second surface and the fourth electrode. Upper surfaces of the first and second phase change patterns may be on the same plane.