Electrically rewritable non-volatile memory element and method of manufacturing the same

Abstract

A non-volatile memory element includes a first interlayer insulation layerhaving a first through-hole, a second interlayer insulation layerhaving a second through-holeformed on the first interlayer insulation layer, a bottom electrodeprovided in the first through-hole, recording layercontaining phase change material provided in the second through-hole, a top electrodeprovided on the second interlayer insulation layer, and a thin-film insulation layerformed between the bottom electrodeand the recording layer. In accordance with this invention, the diameter Dof a bottom electrodeburied in a first through-holeis smaller than the diameter Dof a second through-hole, thereby decreasing the thermal capacity of the bottom electrode. Therefore, when a poreis formed by dielectric breakdown in a thin-film insulation layerand the vicinity is used as a heating region, the amount of heat escaping to the bottom electrodeis decreased, resulting in higher heating efficiency.