The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2008
Filed:
Jan. 25, 2005
George Gordon, Sunnyvale, CA (US);
Stephen Hudgens, Santa Clara, CA (US);
Fabio Pellizzer, Follina, IT;
Agostino Pirovano, Corbetta, IT;
George Gordon, Sunnyvale, CA (US);
Stephen Hudgens, Santa Clara, CA (US);
Fabio Pellizzer, Follina, IT;
Agostino Pirovano, Corbetta, IT;
Intel Corporation, Santa Clara, CA (US);
Abstract
A method for programming a phase change memory cell is discussed. A phase change memory cell includes a memory element of a phase change material having a first state, in which the phase change material is crystalline and has a minimum resistance level, a second state in which the phase change material is amorphous and has a maximum resistance level, and a plurality of intermediate states, in which the phase change material includes both crystalline regions and amorphous regions and has intermediate resistance levels. According to the method, a plurality of programming pulses are provided to the phase change memory cell; programming energies respectively associated to the programming pulses are lower than a threshold energy which is required to bring the phase change material to the second state.