Stanford R Ovshinsky

Bloomfield Hills, MI, United States of America

Stanford R Ovshinsky

This inventor holds 324 USPTO granted patents and 11 published patent applications, plus 10 CIPO patents and 12 EPO patents, primarily in Chalcogenide Materials (CPC class 357-2). Top assignees: Energy Conversion Devices, Inc., Ovonic Battery Company, Inc., Ovonic Synthetic Materials Company Inc.. Active years: 1976-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Stanford R Ovshinsky. Retrieved from https://idiyas.com/inventor/stanford-r-ovshinsky

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 324 

% Patents Active = 82.7

 

 

Average Co-Inventor Count = 2.6

ph-index = 73

Forward Citations = 19,281(Granted Patents)

Forward Citations (Not Self Cited) = 18,891(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Oakland County, MI (US) (1985)
  • Broomfield Hills, MI (US) (1992)
  • Bloomfield Hill, MI (US) (1993)
  • Bloomfield, MI (US) (2003)
  • Troy, MI (US) (2002 - 2008)
  • Bloomfield Hills, MI (US) (1976 - 2012)
  • Rochester Hills, MI (US) (2011 - 2012)

Company Filing History:

goldMedal171 out of 429 
 
Energy Conversion Devices, Inc.
 patents
silverMedal65 out of 114 
 
Ovonic Battery Company, Inc.
 patents
bronzeMedal11 out of 30 
 
Ovonic Synthetic Materials Company Inc.
 patents
4. 11 out of 262 
 
Ovonyx Inc.
 patents
5. 8 out of 8 
 
Ovonic Fuel Cell Company LLC
 patents
6. 8 out of 23 
 
Sovonics Solar Systems
 patents
7. 8 out of 8 
 
Texaco Ovonic Fuel Cell LLC
 patents
8. 7 out of 7 
 
Ovshinsky Innovation LLC
 patents
9. 6 out of 6 
 
Texaco Ovonic Hydrogen Systems LLC
 patents
10. 5 out of 8 
 
Ovonic Hydrogen Systems LLC
 patents
11. 4 out of 14 
 
Voltaix, LLC
 patents
12. 2 out of 3 
 
Texaco Ovonic Battery Systems, LLC
 patents
13. 1 out of 1 
 
Chevron Texaco Technology Ventures, LLC
 patent
14. 1 out of 2 
 
Energy Conversion Systems, Inc.
 patents
15. 1 out of 56,440 
 
Intel Corporation
 patents
16. 1 out of 1 
 
Ovanic Battery Company, Inc.
 patent
17. 1 out of 1 
 
Ovinic Battery Company, Inc.
 patent
18. 1 out of 1 
 
Ovishinsky Innovation, LLC
 patent
19. 1 out of 1 
 
Ovonic Synthetic Materials, Inc.
 patent
20. 1 out of 1 
 
Ovonie Fuel Cell LLC
 patent
21. 1 out of 5,700 
 
Stmicroelectronics S.r.l.
 patents
22. 1 out of 1 
 
Texaco Ovonic Battery Company, Inc.
 patent
23. 1 out of 1 
 
Texaco Ovonic Fuel Cell Uc
 patent
24. 7 out of 834,659 
Other
 patents

Years Active: 1976-2012

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Areas of Expertise:
Chalcogenide Devices
Thin Film Deposition
Optical Switch
Fuel Cell
Hydrogen Storage
Memory Element
Plasma Deposition
Photovoltaic Device
Chemical Vapor Deposition
Electrically Programmable Memory
Hybrid Fuel Cell
Nano-Scale Particulate
324 patents (USPTO):Explore Patents

Title: Stanford R Ovshinsky: Pioneering Innovations in Thin Film Deposition and Semiconductor Technology

Introduction:

Stanford R Ovshinsky, a renowned inventor and entrepreneur, has left an indelible mark on the world of innovations and patents. Based in Bloomfield Hills, MI (US), Ovshinsky's career was marked by numerous milestones and significant contributions to the field. This article highlights his latest patents, career highlights, collaborations, and the impact of his work.

Latest Patents:

Ovshinsky's latest patents demonstrate his expertise in plasma deposition of amorphous semiconductors at microwave frequencies and high-speed thin film deposition via pre-selected intermediates. The first patent describes an apparatus and method for plasma deposition of thin film photovoltaic materials utilizing microwave frequencies. The innovation ensures precise deposition while avoiding unintended deposition on windows or other microwave transmission elements. The technology allows for the fast and reliable formation of silicon-containing amorphous semiconductors with desirable characteristics such as high mobility, low porosity, and low defect concentration.

The second patent focuses on delivering pre-selected precursor intermediates to a deposition chamber for high-rate thin film deposition. By utilizing a metastable species, such as a free radical, Ovshinsky's method enables the formation of thin film materials with low defect concentration. This breakthrough decouples deposition rate from material quality, leading to unprecedented deposition rates and improved overall performance.

Career Highlights:

Throughout his career, Ovshinsky made significant contributions within the companies he worked for, such as Energy Conversion Devices, Inc., and Ovonic Battery Company, Inc. His visionary approach and dedication to research and development helped pave the way for numerous breakthroughs in the field of energy conversion and storage. From his early work on amorphous materials to his later ventures into cutting-edge thin film technology, Ovshinsky continually pushed the boundaries of what was deemed possible.

Collaborations:

Ovshinsky's collaborations with talented coworkers have also played a vital role in his success. Notably, his partnership with Srinivasan Venkatesan and Rosa Young has been influential in advancing the field of thin film deposition and semiconductor technology. Together, they worked as a dynamic team, complementing each other's expertise and pushing the limits of innovation. These collaborations fostered an environment of knowledge-sharing and creativity, resulting in groundbreaking inventions that have shaped the industry.

Conclusion:

Stanford R Ovshinsky's remarkable career, filled with numerous patents and groundbreaking inventions, has significantly contributed to advancements in thin film deposition and semiconductor technology. His expertise in plasma deposition and high-rate thin film formation has opened up new possibilities in the fields of photovoltaics, energy storage, and beyond. Ovshinsky's collaborations and dedication to pushing boundaries have solidified his position as an influential figure in the world of innovations and patents. His legacy continues to inspire future generations of inventors and entrepreneurs to pursue groundbreaking solutions for a better future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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