Stanford R Ovshinsky

Bloomfield Hills, MI, United States of America

Stanford R Ovshinsky

Average Co-Inventor Count = 2.6

ph-index = 73

Forward Citations = 19,231(Granted Patents)

Forward Citations (Not Self Cited) = 18,758(Sep 21, 2024)

DiyaCoin DiyaCoin 11.45 

Inventors with similar research interests:


Location History:

  • Oakland County, MI (US) (1985)
  • Broomfield Hills, MI (US) (1992)
  • Bloomfield Hill, MI (US) (1993)
  • Bloomfield, MI (US) (2003)
  • Troy, MI (US) (2002 - 2008)
  • Bloomfield Hills, MI (US) (1976 - 2012)
  • Rochester Hills, MI (US) (2011 - 2012)


Years Active: 1976-2012

where 'Filed Patents' based on already Granted Patents

324 patents (USPTO):

Title: Stanford R Ovshinsky: Pioneering Innovations in Thin Film Deposition and Semiconductor Technology

Introduction:

Stanford R Ovshinsky, a renowned inventor and entrepreneur, has left an indelible mark on the world of innovations and patents. Based in Bloomfield Hills, MI (US), Ovshinsky's career was marked by numerous milestones and significant contributions to the field. This article highlights his latest patents, career highlights, collaborations, and the impact of his work.

Latest Patents:

Ovshinsky's latest patents demonstrate his expertise in plasma deposition of amorphous semiconductors at microwave frequencies and high-speed thin film deposition via pre-selected intermediates. The first patent describes an apparatus and method for plasma deposition of thin film photovoltaic materials utilizing microwave frequencies. The innovation ensures precise deposition while avoiding unintended deposition on windows or other microwave transmission elements. The technology allows for the fast and reliable formation of silicon-containing amorphous semiconductors with desirable characteristics such as high mobility, low porosity, and low defect concentration.

The second patent focuses on delivering pre-selected precursor intermediates to a deposition chamber for high-rate thin film deposition. By utilizing a metastable species, such as a free radical, Ovshinsky's method enables the formation of thin film materials with low defect concentration. This breakthrough decouples deposition rate from material quality, leading to unprecedented deposition rates and improved overall performance.

Career Highlights:

Throughout his career, Ovshinsky made significant contributions within the companies he worked for, such as Energy Conversion Devices, Inc., and Ovonic Battery Company, Inc. His visionary approach and dedication to research and development helped pave the way for numerous breakthroughs in the field of energy conversion and storage. From his early work on amorphous materials to his later ventures into cutting-edge thin film technology, Ovshinsky continually pushed the boundaries of what was deemed possible.

Collaborations:

Ovshinsky's collaborations with talented coworkers have also played a vital role in his success. Notably, his partnership with Srinivasan Venkatesan and Rosa Young has been influential in advancing the field of thin film deposition and semiconductor technology. Together, they worked as a dynamic team, complementing each other's expertise and pushing the limits of innovation. These collaborations fostered an environment of knowledge-sharing and creativity, resulting in groundbreaking inventions that have shaped the industry.

Conclusion:

Stanford R Ovshinsky's remarkable career, filled with numerous patents and groundbreaking inventions, has significantly contributed to advancements in thin film deposition and semiconductor technology. His expertise in plasma deposition and high-rate thin film formation has opened up new possibilities in the fields of photovoltaics, energy storage, and beyond. Ovshinsky's collaborations and dedication to pushing boundaries have solidified his position as an influential figure in the world of innovations and patents. His legacy continues to inspire future generations of inventors and entrepreneurs to pursue groundbreaking solutions for a better future.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…