The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2012
Filed:
Aug. 12, 2010
Stanford R. Ovshinsky, Bloomfield Hills, MI (US);
David Strand, Bloomfield Township, MI (US);
Patrick Klersy, Ortonville, MI (US);
Boil Pashmakov, Troy, MI (US);
Stanford R. Ovshinsky, Bloomfield Hills, MI (US);
David Strand, Bloomfield Township, MI (US);
Patrick Klersy, Ortonville, MI (US);
Boil Pashmakov, Troy, MI (US);
Ovshinsky Innovation, LLC, Bloomfield Hills, MI (US);
Abstract
Apparatus and method for plasma deposition of thin film photovoltaic materials at microwave frequencies. The apparatus avoids deposition on windows or other microwave transmission elements that couple microwave energy to deposition species. The apparatus includes a microwave applicator with conduits passing therethrough that carry deposition species. The applicator transfers microwave energy to the deposition species to transform them to a reactive state conducive to formation of a thin film material. The conduits physically isolate deposition species that would react to form a thin film material at the point of microwave power transfer. The deposition species are separately energized and swept away from the point of power transfer to prevent thin film deposition. The invention allows for the ultrafast formation of silicon-containing amorphous semiconductors that exhibit high mobility, low porosity, little or no Staebler-Wronski degradation, and low defect concentration.