Bloomfield, MI, United States of America

David A Strand

This inventor holds 29 USPTO granted patents, plus 1 CIPO patent, primarily in Optical Data Storage. Top assignees: Energy Conversion Devices, Inc., Ovshinsky Innovation LLC, Other. Active years: 1978-2012.

USPTO Granted Patents = 29

% Patents Active = 79.3

CIPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 2.6

ph-index = 17

Forward Citations = 4,490(Granted Patents)

Location History:

Novi, MI (US) (1978)
West Bloomfield, MI (US) (1985 - 1994)
Bloomfield Hills, MI (US) (1995)
Bloomfield Township, Oakland County, MI (US) (1994 - 2006)
Bloomfield Township, MI (US) (1996 - 2012)

Company Filing History:

25 out of 429

Energy Conversion Devices, Inc.

patents

3 out of 7

Ovshinsky Innovation LLC

patents

1 out of 834,411

Other

patents

Years Active: 1978-2012

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Areas of Expertise:

Optical Data Storage

Phase-Change Memory

Semiconductor Materials

Plasma Deposition

Microstructures

Data Retrieval Systems

Blue Lasers

Plasmon Lenses

Memory Elements

Liquid Crystal Light Valve

Video Disk Replication

Thickness Control

29 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8222125 - Plasma deposition of amorphous semiconductors at microwave frequencies (2012-07-17),

2. 8101245 - Plasma deposition of amorphous semiconductors at microwave frequencies (2012-01-24),

3. 8048782 - Plasma deposition of amorphous semiconductors at microwave frequencies (2011-11-01),

4. 7388825 - Optical data storage and retrieval systems utilizing dual energy sources (2008-06-17),

5. 7292521 - Optical data storage and systems utilizing plasmon lenses (2007-11-06),

6. 7144241 - Method and apparatus for forming microstructures on polymeric substrates (2006-12-05),

7. 7113474 - Increased data storage in optical data storage and retrieval systems using blue lasers and/or plasmon lenses (2006-09-26),

8. 6087674 - Memory element with memory material comprising phase-change material and (2000-07-11),

9. 5825046 - Composite memory material comprising a mixture of phase-change memory (1998-10-20),

10. 5596522 - Homogeneous compositions of microcrystalline semiconductor material, (1997-01-21),

11. 5536947 - Electrically erasable, directly overwritable, multibit single cell (1996-07-16),

12. 5534712 - Electrically erasable memory elements characterized by reduced current (1996-07-09),

13. 5534711 - Electrically erasable, directly overwritable, multibit single cell (1996-07-09),

14. 5414271 - Electrically erasable memory elements having improved set resistance (1995-05-09),

15. 5406509 - Electrically erasable, directly overwritable, multibit single cell (1995-04-11),

Title: The Innovative Journey of David A. Strand

Introduction: David A. Strand, a talented inventor hailing from Bloomfield Township, Oakland County, MI (US), has made significant contributions to the field of innovation with his creative mind and dedication to progress.

Latest Patents: David A. Strand holds several patents in various technological fields, showcasing his versatility and ingenuity in inventing cutting-edge solutions to complex problems.

Career Highlights: Throughout his illustrious career, David A. Strand has consistently pushed the boundaries of innovation, earning recognition for his groundbreaking work and commitment to excellence in every project he undertakes.

Collaborations: David A. Strand has collaborated with leading experts in the industry, fostering a culture of innovation and knowledge-sharing that has led to the development of revolutionary technologies with real-world applications.

Conclusion: In conclusion, David A. Strand stands as a beacon of inspiration in the world of inventors, with his remarkable achievements and unwavering passion for innovation setting him apart as a true pioneer in his field.