The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 20, 1998

Filed:

Oct. 28, 1996
Applicant:
Inventors:

Wolodymyr Czubatyj, Warren, MI (US);

Stanford R Ovshinsky, Bloomfield Hills, MI (US);

David A Strand, Bloomfield Township, MI (US);

Patrick Klersy, Lake Orion, MI (US);

Sergey Kostylev, Bloomfield Hills, MI (US);

Boil Pashmakov, Troy, MI (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257-2 ; 257-4 ; 257-5 ; 257 77 ; 365163 ;
Abstract

A composite memory material comprising a mixture of active phase-change memory material and inactive dielectric material. The phase-change material includes one or more elements selected from the group consisting of Te, Se, Ge, Sb, Bi, Pb, Sn, As, S, Si, P, O and mixtures or alloys thereof. A single cell memory element comprising the aforementioned composite memory material, and a pair of spacedly disposed contacts.

Published as:
CA2269856A1; WO9819350A1; AU4827197A; US5825046A; EP0947005A1; KR20000052840A; JP2001502848A; EP0947005A4; EP0947005B1; DE69739162D1; JP4933687B2;

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