The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
Jul. 11, 2008
George A. Gordon, San Jose, CA (US);
Ward D. Parkinson, Boise, ID (US);
John M. Peters, San Jose, CA (US);
Tyler A. Lowrey, West Augusta, VA (US);
Stanford Ovshinsky, Bloomfield Hills, MI (US);
Guy C. Wicker, Southfield, MI (US);
Ilya V. Karpov, Santa Clara, CA (US);
Charles C. Kuo, Union City, CA (US);
George A. Gordon, San Jose, CA (US);
Ward D. Parkinson, Boise, ID (US);
John M. Peters, San Jose, CA (US);
Tyler A. Lowrey, West Augusta, VA (US);
Stanford Ovshinsky, Bloomfield Hills, MI (US);
Guy C. Wicker, Southfield, MI (US);
Ilya V. Karpov, Santa Clara, CA (US);
Charles C. Kuo, Union City, CA (US);
Ovonyx, Inc., Troy, MI (US);
Abstract
A memory may be implemented with a stable chalcogenide glass which is defined as a generally amorphous chalcogenide material that does not change to a generally crystalline phase when exposed to 200° C. for 30 minutes or less. Different states may be programmed by changing the threshold voltage of the material. The threshold voltage may be changed with pulses of different amplitude and/or different pulse fall times. Reading may be done using a reference level between the threshold voltages of the two different states. A separate access device is generally not needed.