The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 2012
Filed:
Sep. 12, 2008
Stanford R. Ovshinsky, Rochester Hills, MI (US);
Stanford R. Ovshinsky, Rochester Hills, MI (US);
Ovshinsky Innovation, LLC, Bloomfield Hills, MI (US);
Abstract
A method and apparatus for the unusually high rate deposition of thin film materials on a stationary or continuous substrate. The method includes delivery of a pre-selected precursor intermediate to a deposition chamber and formation of a thin film material from the intermediate. The intermediate is formed outside of the deposition chamber and includes a metastable species such as a free radical. The intermediate is pre-selected to include a metastable species conducive to the formation of a thin film material having a low defect concentration. By forming a low defect concentration material, deposition rate is decoupled from material quality and heretofore unprecedented deposition rates are achieved. In one embodiment, the pre-selected precursor intermediate is SiH. The method further includes combining the pre-selected precursor intermediate with a carrier gas, preferably in a deactivated state, where the carrier gas directs the transport of the pre-selected precursor intermediate to a substrate for deposition of the thin film material.