Ferdinando Bedeschi

Biassono, Italy

Ferdinando Bedeschi

Graduated from:
  • Università di Pisa (Italy)
USPTO Granted Patents = 216 

 

Average Co-Inventor Count = 2.0

ph-index = 18

Forward Citations = 1,237(Granted Patents)

Forward Citations (Not Self Cited) = 1,094(Dec 10, 2025)



Location History:

  • Taranto, IT (2004 - 2006)
  • Monza (MI), IT (2009)
  • Agrate, IT (2011)
  • Agrate Brianza, IT (2009 - 2012)
  • Monza, IT (2006 - 2013)
  • Milan, IT (2009 - 2016)
  • Biassono (MI), IT (2017)
  • Biassono, IT (2006 - 2024)

Company Filing History:


Years Active: 2004-2025

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Areas of Expertise:
Memory Arrays
Transistor Configurations
Sense Amplifiers
Three-Dimensional Memory
Memory Cell Operations
Voltage Management
Adaptive Read Techniques
Counter-Based Methods
Dynamic Reference Read
Feram Technology
Dram Innovations
Memory Device Architecture
216 patents (USPTO):Explore Patents

Title: Ferdinando Bedeschi: Pioneering Innovations for Memory Devices

Introduction:

Ferdinando Bedeschi is a prominent inventor based in Biassono, Italy, who has made significant contributions to the field of memory devices. With an impressive portfolio of 178 patents, Bedeschi has revolutionized the industry with his cutting-edge research and inventions. In this article, we delve into his latest patents and highlight his noteworthy career achievements and collaborations.

Latest Patents:

Bedeschi's latest patents showcase his expertise in improving memory devices with advanced sensing and voltage equalization techniques. One notable invention is the "Differential sensing for a memory device," which describes methods, systems, and devices for generating accurate sense and reference signals. This innovation enhances the overall performance and reliability of memory devices by canceling common aspects of the signals.

Another groundbreaking patent is the "Voltage equalization for pillars of a memory array." This invention presents methods, systems, and devices for effectively equalizing voltage distribution on conductive pillars within a memory array. By dissipating or equalizing charge from unselected pillars, this technology promotes optimal functionality and durability in memory devices.

Career Highlights:

Bedeschi has made significant contributions while working for renowned companies, including Micron Technology Incorporated and Ovonyx Inc. He has excelled in developing innovative technology solutions for memory devices, solidifying his reputation as a pioneer in the industry.

Collaborations:

Throughout his career, Bedeschi has collaborated with esteemed colleagues, such as Umberto Di Vincenzo and Claudio Resta. These collaborations have resulted in noteworthy inventions and patent filings. By leveraging their combined expertise, Bedeschi and his coworkers have contributed to advancements in memory device technology.

Conclusion:

Ferdinando Bedeschi's extensive patent portfolio and groundbreaking inventions demonstrate his profound impact on the field of memory devices. His expertise in differential sensing and voltage equalization has paved the way for improved performance and reliability in memory devices. Collaborating with industry experts, Bedeschi has played a vital role in shaping the future of this technology. As the industry continues to evolve, his contributions will undoubtedly inspire further advancements in memory devices and beyond.

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