The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2015
Filed:
Dec. 18, 2013
Applicant:
Ovonyx, Inc., Sterling Heights, MI (US);
Inventors:
Ilya V. Karpov, Santa Clara, CA (US);
Sean Jong Lee, Yongin, KR;
Yudong Kim, Santa Clara, CA (US);
Greg Atwood, San Jose, CA (US);
Assignee:
Ovonyx, Inc., Sterling Heights, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 27/24 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/141 (2013.01); G11C 13/0004 (2013.01); H01L 27/2427 (2013.01); H01L 27/2472 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1683 (2013.01);
Abstract
An ovonic threshold switch may be formed of a continuous chalcogenide layer. That layer spans multiple cells, forming a phase change memory. In other words, the ovonic threshold switch may be formed of a chalcogenide layer which extends, uninterrupted, over numerous cells of a phase change memory.