Santa Clara, CA, United States of America

Yudong Kim



Average Co-Inventor Count = 3.6

ph-index = 8

Forward Citations = 253(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2007)
  • Cupertino, CA (US) (2008 - 2015)
  • Santa Clara, CA (US) (2001 - 2019)
  • Boise, ID (US) (2017 - 2020)

Company Filing History:


Years Active: 2001-2020

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24 patents (USPTO):

Title: Yudong Kim: Innovator in Memory Device Technology

Introduction

Yudong Kim is a notable inventor based in Santa Clara, California, recognized for his significant contributions to memory device technologies. With a remarkable portfolio consisting of 24 patents, his work has greatly influenced how memory devices are designed and optimized.

Latest Patents

Among Yudong Kim's latest inventions, the "Dual-layer dielectric in memory device" stands out. This innovation encompasses techniques for constructing a memory device featuring a memory array with multiple wordlines, alongside strategically placed fill regions that enhance performance. The first dielectric layer, composed of organic spin-on dielectric material, is complemented by a second dielectric layer made from inorganic materials, thus improving the device's efficiency.

Another significant patent is the "Dual resistance heater for phase change memory devices." This invention enhances the functionality of phase change memory regions through a novel resistive material setup. By selectively increasing the resistance of a portion of the material, a dual resistance heater is formed, allowing for reduced current use while ensuring the performance of the memory device remains optimal. These advancements are critical for improving memory technology.

Career Highlights

Throughout his career, Yudong Kim has worked with prominent companies, enhancing his expertise in the field of memory devices. Notably, he has been employed at Intel Corporation, where he contributed to cutting-edge technologies that deliver high performance and reliability in memory storage solutions.

Collaborations

Yudong has collaborated with skilled professionals in the industry, including Charles C Kuo and Ilya V Karpov. These collaborations reflect his commitment to working with other experts to foster innovation and push the boundaries of technology in memory devices.

Conclusion

Yudong Kim is a distinguished inventor whose work has significantly shaped the landscape of memory device technologies. With a robust patent portfolio and a history of impactful collaborations, his contributions continue to pave the way for advancements in this essential field. His innovative spirit and dedication to research will undoubtedly lead to further breakthroughs in the future.

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