The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Mar. 13, 2008
Ilya Karpov, Santa Clara, CA (US);
Yudong Kim, Cupertino, CA (US);
Ming Jin, San Jose, CA (US);
Shyam Prasad Teegapuram, Santa Clara, CA (US);
Jinwook Lee, San Jose, CA (US);
Ilya Karpov, Santa Clara, CA (US);
Yudong Kim, Cupertino, CA (US);
Ming Jin, San Jose, CA (US);
Shyam Prasad Teegapuram, Santa Clara, CA (US);
Jinwook Lee, San Jose, CA (US);
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A phase change memory formed by a plurality of phase change memory devices having a chalcogenide memory region extending over an own heater. The heaters have all a relatively uniform height. The height uniformity is achieved by forming the heaters within pores in an insulator that includes an etch stop layer and a sacrificial layer. The sacrificial layer is removed through an etching process such as chemical mechanical planarization. Since the etch stop layer may be formed in a repeatable way and is common across all the devices on a wafer, considerable uniformity is achieved in heater height. Heater height uniformity results in more uniformity in programmed memory characteristics.