The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 01, 2015

Filed:

Jul. 25, 2007
Applicants:

Yudong Kim, Cupertino, CA (US);

Charles C. Kuo, Union City, CA (US);

Gianpaolo Spadini, Campbell, CA (US);

Inventors:

Yudong Kim, Cupertino, CA (US);

Charles C. Kuo, Union City, CA (US);

Gianpaolo Spadini, Campbell, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/06 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/144 (2013.01); H01L 27/24 (2013.01); H01L 45/06 (2013.01); H01L 45/126 (2013.01); H01L 45/1233 (2013.01); H01L 45/1683 (2013.01);
Abstract

A phase change memory cell may include two or more stacked or unstacked series connected memory elements. The cell has a higher, adjustable threshold voltage. A copper diffusion plug may be provided within a pore over a copper line. By positioning the plug below the subsequent chalcogenide layer, the plug may be effective to block copper diffusion upwardly into the pore and into the chalcogenide material. Such diffusion may adversely affect the electrical characteristics of the chalcogenide layer.


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